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| to - 220 a plastic - encapsulate diodes mbr 10 150,200 schottky barrier rectifier features ? schottky barrier chip ? guard ring die construc tion for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr10 150 mbr10 200 unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 150 200 v v r(rms) rms reverse voltage 105 140 v i o average recti fied output current 10 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 150 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 e lectrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit mbr10 150 150 reverse voltage v (br) mbr10 200 i r = 0. 1 m a 200 v mbr10 150 v r = 150 v reverse c urrent i r mbr10 200 v r = 200 v 9 a MBR10150 1 forward voltage v f mbr10 200 i f = 10 a 1 .05 v MBR10150 500 typical j unction c apacitance c j mbr10200 v r = 4 v,f=1mhz 200 pf to - 220 a 1 . cathode 2 . anode 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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